Solid State Physics

Despription

  • FTIR spectrometer (absorption/reflection, 12000 - 100 cm-1, 4 - 300 K)
  • Photoluminescence (600 - 1700 nm, 7 - 300 K)
  • X-ray diffraction (2-circle goniometer)
  • Reverb effect (0 - 4 T, 300 - 400 K)
  • Determination of I-U and C-U characteristics
  • Capacity transient spectroscopy (DLTS, 77 - 300 K)
  • Tunnel microscopy (teaching setup)
  • Determination of magnetic sizes
  • Surface scanning process
  • Sample preparation (sawing, grinding, polishing)

  • Infrared absorption measurements (FTIR) on defects in semiconductors (Si, GaAs, etc.)
  • Photoluminescence measurements on semiconductors and semiconductor heterostructures
  • Time-resolved capacity measurements on metal-semiconductor boundary layer structures

Laboratory management

Prof. Dr. Matthias Gramich Room: A 307

T +49 89 1265-1643
F +49 89 1265-1603

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Lab support

Hans-Edwin Wagner Room: D 209

T +49 89 1265-3664
F +49 89 1265-1603

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Thomas Wappmannsberger Room: D 208

T +49 89 1265-3633
F +49 89 1265-1603

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